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This stress method is used to determine the effects of RF bias conditions and temperature on PowerAmplifier Modules (PAMs) over time. These conditions are intended to simulate the devices? operatingcondition in an accelerated way, and they are expected to be applied primarily for device qualification andreliability monitoring.

Product Details

Published:

01/01/2013

Number of Pages:

20

File Size:

1 file , 170 KB